? semiconductor components industries, llc, 2004 may, 2004 ? rev. 4 1 publication order number: 2n6515/d 2n6515, 2n6517, 2n6520 high voltage transistors npn and pnp features ? voltage and current are negative for pnp transistors ? pb?free package is available* maximum ratings rating symbol 2n6515 2n6517 2n6520 unit collector ? emitter voltage v ceo 250 350 vdc collector ? base voltage v cbo 250 350 vdc emitter ? base voltage 2n6515, 2n6516, 2n6517 2n6519, 2n6520 v ebo 6.0 5.0 vdc base current i b 250 madc collector current ? continuous i c 500 madc total device dissipation @ t a = 25 c derate above 25 c p d 625 5.0 mw mw/ c total device dissipation @ t c = 25 c derate above 25 c p d 1.5 12 watts mw/ c operating and storage junction temperature range t j , t stg ?55 to +150 c maximum ratings are those values beyond which device damage can occur. maximum ratings applied to the device are individual stress limit values (not nor- mal operating conditions) and are not valid simultaneously. if these limits are ex- ceeded, device functional operation is not implied, damage may occur and reli- ability may be af fected. thermal characteristics characteristic symbol max unit thermal resistance, junction?to?ambient r ja 200 c/w thermal resistance, junction?to?case r jc 83.3 c/w 2n65xx y = year ww = work week yww marking diagram to?92 case 29 style 1 1 2 3 see detailed ordering and shipping information in the package dimensions section on page 3 of this data sheet. ordering information http://onsemi.com *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. collector 3 2 base 1 emitter collector 3 2 base 1 emitter npn pnp
2n6515, 2n6517, 2n6520 http://onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min max unit off characteristics collector?emitter breakdown v oltage (note 1) (i c = 1.0 madc, i b = 0) 2n6515 2n6517, 2n6520 v (br)ceo 250 350 ? ? vdc collector?base breakdown voltage (i c = 100 adc, i e = 0 ) 2n6515 2n6517, 2n6520 v (br)cbo 250 350 ? ? vdc emitter?base breakdown voltage (i e = 10 adc, i c = 0) 2n6515, 2n6517 2n6520 v (br)ebo 6.0 5.0 ? ? vdc collector cutoff current (v cb = 150 vdc, i e = 0) 2n6515 (v cb = 250 vdc, i e = 0) 2n6517, 2n6520 i cbo ? ? 50 50 nadc emitter cutoff current (v eb = 5.0 vdc, i c = 0) 2n6515, 2n6517 (v eb = 4.0 vdc, i c = 0) 2n6520 i ebo ? ? 50 50 nadc on characteristics (note 1) dc current gain (i c = 1.0 madc, v ce = 10 vdc) 2n6515 2n6517, 2n6520 (i c = 10 madc, v ce = 10 vdc) 2n6515 2n6517, 2n6520 (i c = 30 madc, v ce = 10 vdc) 2n6515 2n6517, 2n6520 (i c = 50 madc, v ce = 10 vdc) 2n6515 2n6517, 2n6520 (i c = 100 madc, v ce = 10 vdc) 2n6515 2n6517, 2n6520 h fe 35 20 50 30 50 30 45 20 25 15 ? ? ? ? 300 200 220 200 ? ? ? collector? emitter saturation v oltage (i c = 10 madc, i b = 1.0 madc) (i c = 20 madc, i b = 2.0 madc) (i c = 30 madc, i b = 3.0 madc) (i c = 50 madc, i b = 5.0 madc) v ce(sat) ? ? ? ? 0.30 0.35 0.50 1.0 vdc base? emitter saturation v oltage (i c = 10 madc, i b = 1.0 madc) (i c = 20 madc, i b = 2.0 madc) (i c = 30 madc, i b = 3.0 madc) v be(sat) ? ? ? 0.75 0.85 0.90 vdc base?emitter on v oltage (i c = 100 madc, v ce = 10 vdc) v be(on) ? 2.0 vdc 1. pulse test: pulse width 300 s, duty cycle 2.0%.
2n6515, 2n6517, 2n6520 http://onsemi.com 3 small?signal characteristics current?gain ? bandwidth product (note 1) (i c = 10 madc, v ce = 20 vdc, f = 20 mhz) f t 40 200 mhz collector?base capacitance (v cb = 20 vdc, i e = 0, f = 1.0 mhz) c cb ? 6.0 pf emitter?base capacitance (v eb = 0.5 vdc, i c = 0, f = 1.0 mhz) 2n6515, 2n6517 2n6520 c eb ? ? 80 100 pf switching characteristics turn?on time (v cc = 100 vdc, v be(off) = 2.0 vdc, i c = 50 madc, i b1 = 10 madc) t on ? 200 s turn?off time (v cc = 100 vdc, i c = 50 madc, i b1 = i b2 = 10 madc) t off ? 3.5 s 1. pulse test: pulse width 300 s, duty cycle 2.0%. ordering information device package shipping 2 2n6515 to?92 5000 unit / bulk 2N6515RLRM to?92 2000 tape & ammo box 2n6517 to?92 5000 unit / bulk 2n6517rlra to?92 2000 tape & reel 2n6517rlrp to?92 2000 tape & ammo box 2n6520rlra to?92 2000 tape & reel 2n6520rlrag to?92 (pb?free) 2000 tape & reel 2for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifica- tions brochure, brd8011/d.
2n6515, 2n6517, 2n6520 http://onsemi.com 4 figure 1. dc current gain npn 2n6515 i c , collector current (ma) 100 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 h fe , dc current gain 200 100 20 30 50 70 v ce = 10 v t j = 125 c 25 c -55 c figure 2. dc current gain npn 2n6517 i c , collector current (ma) 100 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 200 100 10 20 50 70 v ce = 10 v t j = 125 c 25 c -55 c i c , collector current (ma) -100 -1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 -50 -70 v ce = -10 v t j = 125 c 25 c -55 c i c , collector current (ma) 100 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 20 30 50 70 i c , collector current (ma) -100 -1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 -50 -70 f, current-gain bandwidth product (mhz) t f, current-gain bandwidth product (mhz) t h fe , dc current gain h fe , dc current gain 10 100 20 30 50 70 10 t j = 25 c v ce = 20 v f = 20 mhz t j = 25 c v ce = -20 v f = 20 mhz 30 200 100 10 20 50 70 30 figure 3. dc current gain pnp 2n6520 figure 4. current?gain ? bandwidth product npn 2n6515, 2n6517 figure 5. current?gain ? bandwidth product pnp 2n6520
2n6515, 2n6517, 2n6520 http://onsemi.com 5 figure 6. aono voltages npn 2n6515, 2n6517 figure 7. aono voltages pnp 2n6520 figure 8. temperature coefficients npn 2n6515, 2n6517 figure 9. temperature coefficients pnp 2n6520 i c , collector current (ma) 100 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 v, voltage (volts) 1.4 1.2 0 0.6 0.8 1.0 i c , collector current (ma) -100 -1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 -50 -70 i c , collector current (ma) 100 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 2.5 i c , collector current (ma) -100 -1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 -50 -70 figure 10. capacitance npn 2n6515, 2n6517 v r , reverse voltage (volts) 200 0.2 0.5 1.0 2.0 5.0 10 20 50 100 100 2.0 3.0 5.0 70 v r , reverse voltage (volts) c, capacitance (pf) 1.0 v, voltage (volts) 0.4 0.2 t j = 25 c v be(sat) @ i c /i b = 10 v be(on) @ v ce = 10 v v ce(sat) @ i c /i b = 10 v ce(sat) @ i c /i b = 5.0 -1.4 -1.2 0 -0.6 -0.8 -1.0 -0.4 -0.2 t j = 25 c v be(sat) @ i c /i b = 10 v be(on) @ v ce = -10 v v ce(sat) @ i c /i b = 10 v ce(sat) @ i c /i b = 5.0 r v , temperature coefficients (mv/ c) q r v , temperature coefficients (mv/ c) q 2.0 1.5 1.0 0.5 0 -0.5 -1.0 -1.5 -2.0 -2.5 r vc for v ce(sat) r vb for v be 25 c to 125 c -55 c to 25 c -55 c to 125 c i c i b 10 r vc for v ce(sat) r vb for v be 25 c to 125 c -55 c to 25 c -55 c to 125 c i c i b 10 c, capacitance (pf) 7.0 10 20 30 50 -20 0 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -10 0 t j = 25 c t j = 25 c c cb c eb c cb c eb 2.5 2.0 1.5 1.0 0.5 0 -0.5 -1.0 -1.5 -2.0 -2.5 100 2.0 3.0 5.0 70 1.0 7.0 10 20 30 50 figure 11. capacitance pnp 2n6520
2n6515, 2n6517, 2n6520 http://onsemi.com 6 figure 12. turn?on time npn 2n6515, 2n6517 i c , collector current (ma) 100 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 t, time (ns) 1.0k 20 10 i c , collector current (ma) -100 -1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 -50 -70 i c , collector current (ma) 100 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 i c , collector current (ma) -100 -1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 -50 -70 30 50 70 100 200 300 500 700 t, time (ns) t d @ v be(off) = 2.0 v t r v ce(off) = 100 v i c /i b = 5.0 t j = 25 c t d @ v be(off) = 2.0 v t r v ce(off) = -100 v i c /i b = 5.0 t j = 25 c t, time (ns) 10k 100 200 300 500 700 1.0k 2.0k 3.0k 5.0k 7.0k 20 30 50 70 100 200 300 500 700 1.0k 2.0k v ce(off) = 100 v i c /i b = 5.0 i b1 = i b2 t j = 25 c v ce(off) = -100 v i c /i b = 5.0 i b1 = i b2 t j = 25 c t s t f t s t f 1.0k 20 10 30 50 70 100 200 300 500 700 figure 13. turn?on time pnp 2n6520 figure 14. turn?off time npn 2n6515, 2n6517 figure 15. turn?off time pnp 2n6520
2n6515, 2n6517, 2n6520 http://onsemi.com 7 figure 16. switching time test circuit 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 r(t), transient thermal resistance (normalized) 10k 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0k 2.0k 5.0k t, time (ms) figure 17. thermal response 500 200 100 50 20 10 5.0 2.0 1.0 0.5 i c , collector current (ma) 0.5 1.0 2.0 5.0 10 20 50 100 200 500 v ce , collector-emitter voltage (volts) figure 18. active region safe operating area design note: use of transient thermal resistance data figure a t p p p p p t 1 1/f dutycycle t 1 f t 1 t p peak pulse power = p p t a = 25 c 1.0 ms 10 s t c = 25 c 100 s 100 ms +10.8 v -9.2 v +v cc 2.2 k 20 k 50 50 sampling scope 1/2msd7000 1.0 k v cc adjusted for v ce(off) = 100 v approximately -1.35 v (adjust for v (be)off = 2.0 v) pulse width 100 s t r , t f 5.0 ns duty cycle 1.0% for pnp test circuit, reverse all voltage polarities d = 0.5 0.2 0.1 0.05 single pulse single pulse z jc(t) = r(t) ? r jc t j(pk) - t c = p (pk) z jc(t) z ja(t) = r(t) ? r ja t j(pk) - t a = p (pk) z ja(t) current limit thermal limit (pulse curves @ t c = 25 c) second breakdown limit curves apply below rated v ceo 2n6515 2n6517, 2n6520
2n6515, 2n6517, 2n6520 http://onsemi.com 8 package dimensions style 1: pin 1. emitter 2. base 3. collector to?92 case 29?11 issue al notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. contour of package beyond dimension r is uncontrolled. 4. lead dimension is uncontrolled in p and beyond dimension k minimum. r a p j l b k g h section x?x c v d n n xx seating plane dim min max min max millimeters inches a 0.175 0.205 4.45 5.20 b 0.170 0.210 4.32 5.33 c 0.125 0.165 3.18 4.19 d 0.016 0.021 0.407 0.533 g 0.045 0.055 1.15 1.39 h 0.095 0.105 2.42 2.66 j 0.015 0.020 0.39 0.50 k 0.500 --- 12.70 --- l 0.250 --- 6.35 --- n 0.080 0.105 2.04 2.66 p --- 0.100 --- 2.54 r 0.115 --- 2.93 --- v 0.135 --- 3.43 --- 1 on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, in cluding without limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scillc data sheets and/or specifications can and do vary in different a pplications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical e xperts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc prod uct could create a situation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indem nify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney f ees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was neglig ent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800?282?9855 toll free usa/canada japan : on semiconductor, japan customer focus center 2?9?1 kamimeguro, meguro?ku, tokyo, japan 153?0051 phone : 81?3?5773?3850 2n6515/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303?675?2175 or 800?344?3860 toll free usa/canada fax : 303?675?2176 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : http://onsemi.com order literature : http://www.onsemi.com/litorder for additional information, please contact your local sales representative.
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